vishay siliconix SI5458DU new product document number: 65019 s09-1392-rev. a, 20-jul-09 www.vishay.com 1 n-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) d, e q g (typ.) 30 0.041 at v gs = 10 v 6 2.8 nc 0.051 at v gs = 4.5 v 6 notes: a. surface mounted on 1" x 1" fr4 board. b. t = 5 s. c. maximum under steady state conditions is 72 c/w. d. based on t c = 25 c. e. package limited. f. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak chipfet is a leadless pack age. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manu facturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. g. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 6 e a t c = 70 c 6 e t a = 25 c 6 a, b, e t a = 70 c 6 a, b, e pulsed drain current i dm 20 continuous source-drain diode current t c = 25 c i s 6 t a = 25 c 2.9 a, b maximum power dissipation t c = 25 c p d 10.4 w t c = 70 c 6.7 t a = 25 c 3.5 a, b t a = 70 c 2.2 a, b operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) f, g 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, c t 5 s r thja 30 36 c/w maximum junction-to-case (drain) steady state r thjc 10 12 marking code ap xxx lot tracea b ility and date code part # code orderin g information: si545 8 du-t1-ge3 (lead (p b )-free and halogen-free) n - c hannel m os fet g d s (1, 2, 3, 6, 7, 8 ) (4) (5) bottom v ie w powerpak ? chipfet sin g le d d d g 1 2 8 7 6 5 d d d s 3 4 s features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? load switch ? hdd dc/dc
www.vishay.com 2 document number: 65019 s09-1392-rev. a, 20-jul-09 vishay siliconix SI5458DU new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 v v ds temperature coefficient v ds /t j i d = 250 a 32 mv/c v gs(th) temperature coefficient v gs(th) /t j - 5 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.2 3 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 70 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 15 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 7.1 a 0.034 0.041 v gs = 4.5 v, i d = 6.3 a 0.042 0.051 forward transconductance a g fs v ds = 15 v, i d = 7.1 a 15 s dynamic b input capacitance c iss v ds = 15 v, v gs = 0 v, f = 1 mhz 325 pf output capacitance c oss 60 reverse transfer capacitance c rss 30 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 7.1 a 69 nc v ds = 15 v, v gs = 4.5 v, i d = 7.1 a 2.8 4.2 gate-source charge q gs 1.1 gate-drain charge q gd 0.8 gate resistance r g f = 1 mhz 0.6 2.8 5.6 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 2.7 i d ? 5.6 a, v gen = 4.5 v, r g = 1 12 18 ns rise time t r 13 20 turn-off delay time t d(off) 16 25 fall time t f 11 17 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 2.7 i d ? 5.6 a, v gen = 10 v, r g = 1 48 rise time t r 918 turn-off delay time t d(off) 11 20 fall time t f 815 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 1.2 a pulse diode forward current i sm 20 body diode voltage v sd i s = 5.6 a, v gs = 0 v 0.8 1.2 v body diode reverse recovery time t rr i f = 5.6 a, di/dt = 100 a/s, t j = 25 c 11 20 ns body diode reverse recovery charge q rr 48nc reverse recovery fall time t a 6 ns reverse recovery rise time t b 5
document number: 65019 s09-1392-rev. a, 20-jul-09 www.vishay.com 3 vishay siliconix SI5458DU new product typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 v gs =10 v thr u 4 v v gs =3 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 v gs = 4.5 v v gs =10 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 0123456 i d = 7.1 a v ds =24 v v ds =15 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 01234 t c = 25 c t c = 125 c t c =- 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d c rss 0 100 200 300 400 0 5 10 15 20 25 30 c iss c oss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 v gs =4.5 v ;i d =6.3 a v gs =10 v ;i d =7.1 a t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on)
www.vishay.com 4 document number: 65019 s09-1392-rev. a, 20-jul-09 vishay siliconix SI5458DU new product typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 1.5 t j = 150 c t j = 25 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1.1 1.3 1.5 1.7 1.9 2.1 2.3 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power 0.00 0.02 0.04 0.06 0.0 8 0.10 0246 8 10 t j =25 c t j =125 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0 5 10 15 20 25 30 0.001 0.01 0.01 1 10 100 time (s) po w er ( w ) safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 100 s limited b yr ds(on) * b v dss limited 1ms 10 ms 100 ms dc v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d 1s,10s
document number: 65019 s09-1392-rev. a, 20-jul-09 www.vishay.com 5 vishay siliconix SI5458DU new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 3 6 9 12 15 0 255075100125150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) power, junction-to-case 0 3 6 9 12 15 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) power, junction-to-ambient 0.0 0.6 1.2 1. 8 2.4 0 25 50 75 100 125 150 t a -am b ient temperat u re (c) po w er ( w )
www.vishay.com 6 document number: 65019 s09-1392-rev. a, 20-jul-09 vishay siliconix SI5458DU new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65019 . normalized thermal transient im pedance, junction-to-ambient 1 0.1 0.01 d u ty cycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 10 -3 10 -2 1 10 -1 10 -4 0.02 single p u lse 0.1 0.2 0.05 100 1000 10 000 10 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 72 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted normalized thermal transient impedance, junction-to-case 1 0.1 d u ty cycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 10 -3 10 -2 1 10 -1 10 -4 0.02 single p u lse 0.1 0.2 0.05
package information www.vishay.com vishay siliconix revision: 21-jul-14 1 document number: 73203 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpak ? chipfet ? case outline note ? millimeters will govern dim. millimeters inches min. nom. max. min. nom. max. a 0.70 0.75 0.85 0.028 0.030 0.033 a1 0 - 0.05 0 - 0.002 b 0.25 0.30 0.35 0.010 0.012 0.014 c 0.15 0.20 0.25 0.006 0.008 0.010 d 2.92 3.00 3.08 0.115 0.118 0.121 d1 1.75 1.87 2.00 0.069 0.074 0.079 d2 1.07 1.20 1.32 0.042 0.047 0.052 d3 0.20 0.25 0.30 0.008 0.010 0.012 e 1.82 1.90 1.98 0.072 0.075 0.078 e1 1.38 1.50 1.63 0.054 0.059 0.064 e2 0.92 1.05 1.17 0.036 0.041 0.046 e3 0.45 0.50 0.55 0.018 0.020 0.022 e 0.65 bsc 0.026 bsc h 0.15 0.20 0.25 0.006 0.008 0.010 k 0.25 - - 0.010 - - k1 0.30 - - 0.012 - - k2 0.20 - - 0.008 - - k3 0.20 - - 0.008 - - l 0.30 0.35 0.40 0.012 0.014 0.016 c14-0630-rev. e, 21-jul-14 dwg: 5940 d e h e1 d1 k l k1 e3 d3 back s ide view of s ingle pad (5) (6) (7) (8) (1) (2) (3) (4) d(2) d(1) d(3) g (4) d(8) d(7) d(6) s (5) z c a b e a1 d2 d2 k3 l e2 h k2 detail z back s ide view of dual pad g i(2) s i(1) s 2(3) g 2(4) d1(7) d1(8) d2(6) d2(5) s ide view of s ingle s ide view of dual pin #1 indicator
application note 826 vishay siliconix document number: 69948 www.vishay.com revision: 21-jan-08 9 application note recommended minimum pads for powerpak ? chipfet ? single 0.200 (0.00 8 ) recommended minim u m pads dimensions in mm/(inches) 0.225 (0.009) 0.650 (0.026) 0.300 (0.012) 0.350 (0.014) 0.300 (0.012) 0.100 (0.004) 0.250 (0.010) 0.500 (0.020) 0.350 (0.014) 0.350 (0.014) 0.305 (0.012) 2.575 (0.101) 1. 8 70 (0.074) 1.500 (0.059) 1.900 (0.075) return to index
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